Polarization-induced Rashba spin-orbit coupling in structurally symmetric III-Nitride quantum wells

摘要

The effective linear coupling coefficient and the total spin-splitting arecalculated in Ga- and N- face InGaN quantum wells. Alloy content, geometry, andgate voltage affect an internal field and an electron density distribution inthe growth direction that has direct effect on a spin-splitting. The sign ofstructural inversion asymmetry (SIA) spin-orbit coupling coefficient depends onan internal electric field in the well that results in different signs forGa-face and N-face III-Nitride structures. The effective linear couplingcoefficient is always positive because of the Dresselhaus-type contributionthat is a major one in quantum wells under consideration. The magnitude of thespin-splitting is comparable with that experimentally observed in III-Nitridesand III-V zinc-blende structures.